MTS/Sr. MTS Engineer – Discrete Power FET Technology Development

{
  "content_hash": "deb95219100f2b828975aab411fdd07d0a8bdd3f9a0ef745f4e73d1cce2b1603",
  "source_hash": "ad72aa643628f6935c7694c4b40d98038240f01aeec06b64ff31b4a13d61db6c",
  "last_changed_at": "2026-05-31T18:04:51.299Z",
  "active_status": "active"
}

{
  "language": "en",
  "location": {
    "raw": "Hopewell Junction, NY, United States",
    "city": "Hopewell Junction",
    "region": "NY",
    "country": "United States",
    "is_remote": false,
    "confidence": 0.8
  },
  "salary_max": 250000,
  "salary_min": 147000,
  "inferred_at": "2026-06-06T11:27:55.024Z",
  "launch_scope": {
    "reason": "english_us_canada",
    "included": true,
    "language": "en",
    "location": {
      "raw": "Hopewell Junction, NY, United States",
      "city": "Hopewell Junction",
      "region": "NY",
      "country": "United States",
      "is_remote": false,
      "confidence": 0.8
    },
    "countries": [
      "United States"
    ]
  },
  "remote_policy": null,
  "salary_period": "year",
  "workplace_type": null,
  "salary_currency": "USD"
}

{}

{
  "detail": {
    "Id": "2505091",
    "Title": "MTS/Sr. MTS Engineer – Discrete Power FET Technology Development",
    "media": [],
    "skills": [],
    "JobType": null,
    "Category": "Engineering",
    "JobGrade": null,
    "JobLevel": null,
    "JobShift": "Day",
    "WorkDays": null,
    "WorkHours": null,
    "WorkYears": null,
    "Department": null,
    "HotJobFlag": true,
    "StudyLevel": "Bachelors",
    "WorkMonths": null,
    "WorkerType": null,
    "GeographyId": 300000001614457,
    "JobFamilyId": 300000006382317,
    "JobFunction": null,
    "JobSchedule": "Full time",
    "BusinessUnit": null,
    "ContractType": null,
    "Organization": null,
    "TrendingFlag": false,
    "workLocation": [
      {
        "Country": "US",
        "Region1": "Dutchess",
        "Region2": "NY",
        "Region3": null,
        "Building": null,
        "Latitude": "41.57366",
        "Longitude": "-73.79527",
        "LocationId": 300000167508418,
        "PostalCode": "12533",
        "TownOrCity": "Hopewell Junction",
        "AddressLine1": "Building 308 Receiving",
        "AddressLine2": "2070 NY-52",
        "AddressLine3": null,
        "AddressLine4": null,
        "LocationName": "USNY04 192 SCI LLC"
      }
    ],
    "ContentLocale": "en",
    "HiringManager": null,
    "LegalEmployer": null,
    "RequisitionId": 300006320795425,
    "WorkplaceType": "",
    "BusinessUnitId": 300000006107333,
    "OrganizationId": 300000001567031,
    "GeographyNodeId": 100002014132959,
    "JobFunctionCode": null,
    "LegalEmployerId": 300000001567031,
    "PrimaryLocation": "Hopewell Junction, NY, United States",
    "RequisitionType": "Professional - Exempt, IDL",
    "NumberOfOpenings": null,
    "WorkplaceTypeCode": null,
    "BeFirstToApplyFlag": false,
    "otherWorkLocations": [],
    "secondaryLocations": [],
    "ExternalContactName": null,
    "ShortDescriptionStr": "",
    "ExternalContactEmail": null,
    "ExternalPostedEndDate": null,
    "OtherRequisitionTitle": null,
    "requisitionFlexFields": [],
    "ApplyWhenNotPostedFlag": true,
    "DomesticTravelRequired": null,
    "ExternalDescriptionStr": "<p>onsemi is a leading innovator in semiconductor technology, dedicated to advancing power electronics through cutting‑edge research and development. We are seeking a talented and motivated <strong>Member of Technical Staff (MTS) or Senior Member of Technical Staff (SMTS) Engineer</strong> to join our team and drive the development of next‑generation <strong>discrete power FET technologies</strong>. This role offers high technical ownership, cross‑functional visibility, and the opportunity to directly shape onsemi’s future power device roadmap.</p>",
    "ObjectVerNumberProfile": "1",
    "PrimaryLocationCountry": "US",
    "CorporateDescriptionStr": "<div>\n <b>onsemi&nbsp;</b><span class=\"ui-provider\">(Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world.<br></span>\n</div>\n<div>\n <span class=\"ui-provider\"><br></span>\n</div>\n<div>\n <p style=\"margin: 0in\"><b><span style=\"font-weight: normal\">More details about our company benefits can be found here:</span></b></p>\n <p style=\"margin: 0in\"><a href=\"https://www.onsemi.com/careers/career-benefits\" target=\"_blank\" rel=\"nofollow\">https://www.onsemi.com/careers/career-benefits</a></p>\n</div>",
    "ExternalPostedStartDate": "2026-04-08T14:08:54+00:00",
    "ExternalQualificationsStr": "<p><strong>Qualifications</strong></p>\n<ul>\n <li>PhD, Master’s, or Bachelor's degree in Electrical Engineering, Materials Science, Electrical Engineering, Physics, or a related field.</li>\n <li>Proven experience in <strong>semiconductor device design and development</strong>, specifically with discrete power FETs (trench MOSFETs, superjunction, or related structures).</li>\n <li>Experience with post wafer fab operations such as Back-Grind/Back Metallization, Packaging, Dicing and Singulation, module construction.</li>\n <li>Experience with wafer level testing, ILT/WAT/PCM and Probe.&nbsp; Familiarity with package level Final Testing especially for discrete power devices</li>\n <li>Experience taking technologies from development stage, through optimization and qualification and into volume ramp.</li>\n <li>Strong understanding of <strong>semiconductor physics, device reliability, and fabrication processes</strong>, including experience in <strong>300mm fabrication</strong>.</li>\n <li>Demonstrated ability to <strong>translate high‑level objectives</strong> into actionable engineering plans and drive projects independently.</li>\n <li>Strong data‑driven problem‑solving skills using DOE, statistical analysis, SPC, 6‑sigma, and FMEA methodologies.</li>\n <li>Proficiency with <strong>TCAD, SPICE</strong>, and relevant simulation tools; experience in electro‑thermal and parasitic modeling preferred.</li>\n <li>Track record of leading or significantly contributing to technology development projects with measurable impact on <strong>performance, reliability, yield, or cost</strong>.</li>\n <li>Excellent communication skills with the ability to present complex technical topics clearly to both engineering and executive audiences.</li>\n <li><span>Ability to manage multiple projects simultaneously in a fast‑paced development environment</span></li>\n</ul>\n<p><strong>Preferred Skills</strong></p>\n<ul>\n <li>Experience with <strong>high‑voltage and high‑current power device applications</strong>.</li>\n <li>Knowledge of <strong>automotive AEC‑Q101 reliability testing</strong>, including HTGB, HTRB, power cycling, UIS, SOA, and mission‑profile testing.</li>\n <li>Familiarity with <strong>wide‑bandgap (SiC/GaN) devices</strong>, electro‑thermal coupling, ruggedness physics, and advanced packaging (DFN, TO‑leadframe, copper clip, modules).</li>\n <li>Hands‑on experience with <strong>design rules, device layout, and design environments</strong>.</li>\n <li>Strong background in statistical analysis and data tools (JMP, Python, MATLAB).</li>\n <li>Understanding of industry standards, safety, and regulatory requirements for power electronics</li>\n</ul>\n<p><span>Salary:&nbsp;onsemi is excited to share the base salary range for this position is&nbsp;$147,000 to $250,000 exclusive of fringe benefits or potential bonuses.&nbsp;The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members. We also offer a competitive benefits package.&nbsp;</span><a href=\"https://www.onsemi.com/site/pdf/Benefits-Summary-USA.pdf\" target=\"_blank\" rel=\"nofollow\">https://www.onsemi.com/site/pdf/Benefits-Summary-USA.pdf</a></p>",
    "InternalQualificationsStr": "<p><strong>Qualifications</strong></p>\n<ul>\n <li>PhD, Master’s, or Bachelor's degree in Electrical Engineering, Materials Science, Electrical Engineering, Physics, or a related field.</li>\n <li>Proven experience in <strong>semiconductor device design and development</strong>, specifically with discrete power FETs (trench MOSFETs, superjunction, or related structures).</li>\n <li>Experience with post wafer fab operations such as Back-Grind/Back Metallization, Packaging, Dicing and Singulation, module construction.</li>\n <li>Experience with wafer level testing, ILT/WAT/PCM and Probe.&nbsp; Familiarity with package level Final Testing especially for discrete power devices</li>\n <li>Experience taking technologies from development stage, through optimization and qualification and into volume ramp.</li>\n <li>Strong understanding of <strong>semiconductor physics, device reliability, and fabrication processes</strong>, including experience in <strong>300mm fabrication</strong>.</li>\n <li>Demonstrated ability to <strong>translate high‑level objectives</strong> into actionable engineering plans and drive projects independently.</li>\n <li>Strong data‑driven problem‑solving skills using DOE, statistical analysis, SPC, 6‑sigma, and FMEA methodologies.</li>\n <li>Proficiency with <strong>TCAD, SPICE</strong>, and relevant simulation tools; experience in electro‑thermal and parasitic modeling preferred.</li>\n <li>Track record of leading or significantly contributing to technology development projects with measurable impact on <strong>performance, reliability, yield, or cost</strong>.</li>\n <li>Excellent communication skills with the ability to present complex technical topics clearly to both engineering and executive audiences.</li>\n <li><span>Ability to manage multiple projects simultaneously in a fast‑paced development environment</span></li>\n</ul>\n<p><strong>Preferred Skills</strong></p>\n<ul>\n <li>Experience with <strong>high‑voltage and high‑current power device applications</strong>.</li>\n <li>Knowledge of <strong>automotive AEC‑Q101 reliability testing</strong>, including HTGB, HTRB, power cycling, UIS, SOA, and mission‑profile testing.</li>\n <li>Familiarity with <strong>wide‑bandgap (SiC/GaN) devices</strong>, electro‑thermal coupling, ruggedness physics, and advanced packaging (DFN, TO‑leadframe, copper clip, modules).</li>\n <li>Hands‑on experience with <strong>design rules, device layout, and design environments</strong>.</li>\n <li>Strong background in statistical analysis and data tools (JMP, Python, MATLAB).</li>\n <li>Understanding of industry standards, safety, and regulatory requirements for power electronics</li>\n</ul>\n<p><span>Salary:&nbsp;onsemi is excited to share the base salary range for this position is&nbsp;$147,000 to $250,000 exclusive of fringe benefits or potential bonuses.&nbsp;The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members. We also offer a competitive benefits package.&nbsp;</span><a href=\"https://www.onsemi.com/site/pdf/Benefits-Summary-USA.pdf\" target=\"_blank\" rel=\"nofollow\">https://www.onsemi.com/site/pdf/Benefits-Summary-USA.pdf</a></p>",
    "OrganizationDescriptionStr": "<span>We are committed to sourcing, attracting, and hiring high-performance innovators, while providing all candidates a positive recruitment experience that builds our brand as a great place to work.</span><span></span>\n<div>\n <br/>\n</div>\n<div>\n <br/>\n</div>\n<div>\n <b>onsemi</b>&nbsp;is an Equal Opportunity Employer. All qualified applicants will receive consideration for employment without regard to race, ethnicity, color, religion, ancestry, national origin, age, marital status, pregnancy, sex, sexual orientation, physical or mental disability, medical condition, genetic information, military or veteran status, gender identity, gender expression, or any other protected category under applicable federal, state, or local laws.\n</div>\n<div>\n <br/>\n</div>\n<div>\n If you are an individual with a disability and require a reasonable accommodation to complete any part of the application process, or are limited in the ability or unable to access or use this online application process and need an alternative method for applying, you may contact&nbsp;<span><a href=\"mailto:[email protected]\" target=\"_blank\">[email protected]</a></span> for assistance.\n</div>",
    "primaryLocationCoordinates": [
      {
        "Latitude": "41.57661",
        "Longitude": "-73.80745",
        "CountryCode": "US",
        "GeographyId": 300000001614457,
        "GeographyNodeId": 100002014132959
      }
    ],
    "ExternalResponsibilitiesStr": "<p><strong>Responsibilities</strong></p>\n<ul>\n <li><strong>Lead technology development</strong> for onsemi’s advanced nodes of discrete power FETs, owning device architecture from concept definition through qualification and high‑volume manufacturing.</li>\n <li><strong>Define electrical targets and device structures</strong>, collaborating with design, process integration, and modeling teams to optimize Rds(on), switching performance, ruggedness, and power density.</li>\n <li>Conduct or direct <strong>TCAD, electro‑thermal, and compact modeling simulations</strong> to predict performance, parasitics, and reliability behavior.</li>\n <li>Partner with <strong>process module owners</strong> in the fab to optimize process windows, ensure device robustness, and resolve integration challenges.</li>\n <li>Perform <strong>device characterization, electrical testing, and failure analysis</strong>, ensuring compliance with specifications and customer requirements.</li>\n <li>Drive <strong>structured root‑cause analysis</strong> (DOE, 6‑sigma, SPC, FMEA) for yield, reliability, or device‑related issues, and implement sustainable corrective actions.</li>\n <li>Collaborate with <strong>systems engineering, product engineering, packaging, and applications teams</strong> to integrate power FETs into system‑level solutions and end‑customer applications.</li>\n <li>Monitor industry trends and emerging device concepts in power MOSFET, superjunction, and wide‑bandgap (SiC/GaN) technologies.</li>\n <li>Generate <strong>invention disclosures, patents, and technical reports</strong> to strengthen onsemi’s IP portfolio and documentation standards.</li>\n <li>Provide <strong>technical guidance, coaching, and mentorship</strong> to junior engineers; matrix‑manage engineers across multiple organizations.</li>\n <li>Present technical content in <strong>executive‑level reviews</strong> and represent the team in cross‑functional and customer‑facing discussions.</li>\n <li><span>Report directly to the <strong>Sr. Director of Technology Development</strong></span></li>\n</ul>",
    "InternalResponsibilitiesStr": "<p><strong>Responsibilities</strong></p>\n<ul>\n <li><strong>Lead technology development</strong> for onsemi’s advanced nodes of discrete power FETs, owning device architecture from concept definition through qualification and high‑volume manufacturing.</li>\n <li><strong>Define electrical targets and device structures</strong>, collaborating with design, process integration, and modeling teams to optimize Rds(on), switching performance, ruggedness, and power density.</li>\n <li>Conduct or direct <strong>TCAD, electro‑thermal, and compact modeling simulations</strong> to predict performance, parasitics, and reliability behavior.</li>\n <li>Partner with <strong>process module owners</strong> in the fab to optimize process windows, ensure device robustness, and resolve integration challenges.</li>\n <li>Perform <strong>device characterization, electrical testing, and failure analysis</strong>, ensuring compliance with specifications and customer requirements.</li>\n <li>Drive <strong>structured root‑cause analysis</strong> (DOE, 6‑sigma, SPC, FMEA) for yield, reliability, or device‑related issues, and implement sustainable corrective actions.</li>\n <li>Collaborate with <strong>systems engineering, product engineering, packaging, and applications teams</strong> to integrate power FETs into system‑level solutions and end‑customer applications.</li>\n <li>Monitor industry trends and emerging device concepts in power MOSFET, superjunction, and wide‑bandgap (SiC/GaN) technologies.</li>\n <li>Generate <strong>invention disclosures, patents, and technical reports</strong> to strengthen onsemi’s IP portfolio and documentation standards.</li>\n <li>Provide <strong>technical guidance, coaching, and mentorship</strong> to junior engineers; matrix‑manage engineers across multiple organizations.</li>\n <li>Present technical content in <strong>executive‑level reviews</strong> and represent the team in cross‑functional and customer‑facing discussions.</li>\n <li><span>Report directly to the <strong>Sr. Director of Technology Development</strong></span></li>\n</ul>",
    "InternationalTravelRequired": null
  },
  "list_job": {
    "Id": "2505091",
    "Title": "MTS/Sr. MTS Engineer – Discrete Power FET Technology Development",
    "JobType": null,
    "Distance": 1775606400000,
    "JobShift": null,
    "Language": "US",
    "WorkDays": null,
    "JobFamily": null,
    "Relevancy": 7,
    "WorkHours": null,
    "Department": null,
    "HotJobFlag": true,
    "PostedDate": "2026-04-08",
    "StudyLevel": null,
    "WorkerType": null,
    "GeographyId": 300000001614457,
    "JobFunction": null,
    "JobSchedule": null,
    "BusinessUnit": null,
    "ContractType": null,
    "ManagerLevel": null,
    "Organization": null,
    "TrendingFlag": false,
    "workLocation": [
      {
        "Country": "US",
        "Region1": "Dutchess",
        "Region2": "NY",
        "Region3": null,
        "Building": null,
        "Latitude": 41.57366,
        "Longitude": -73.79527,
        "LocationId": 300000167508418,
        "PostalCode": "12533",
        "TownOrCity": "Hopewell Junction",
        "AddressLine1": "Building 308 Receiving",
        "AddressLine2": "2070 NY-52",
        "AddressLine3": null,
        "AddressLine4": null,
        "LocationName": "USNY04 192 SCI LLC"
      }
    ],
    "LegalEmployer": null,
    "MediaThumbURL": null,
    "WorkplaceType": "",
    "BusinessUnitId": 300000006107333,
    "OrganizationId": 300000001567031,
    "PostingEndDate": null,
    "LegalEmployerId": 300000001567031,
    "PrimaryLocation": "Hopewell Junction, NY, United States",
    "WorkDurationYears": null,
    "WorkplaceTypeCode": null,
    "BeFirstToApplyFlag": false,
    "WorkDurationMonths": null,
    "otherWorkLocations": [],
    "secondaryLocations": [],
    "ShortDescriptionStr": "",
    "requisitionFlexFields": [],
    "DomesticTravelRequired": null,
    "PrimaryLocationCountry": "US",
    "ExternalQualificationsStr": null,
    "ExternalResponsibilitiesStr": null,
    "InternationalTravelRequired": null
  },
  "detail_meta": {
    "url": "https://hctz.fa.us2.oraclecloud.com/hcmRestApi/resources/latest/recruitingCEJobRequisitionDetails?expand=all&onlyData=true&finder=ById;Id=%222505091%22,siteNumber=cx_1001",
    "http_status": 200,
    "content_type": "application/json",
    "response_bytes": 16743
  },
  "detail_errors": []
}